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Contents:
  1. III-Nitride Materials, Devices and Nano-Structures
  2. Undergraduate Courses
  3. We’re sorry.
  4. Advances in quantum light emission from 2D materials : Nanophotonics

Citron, H.

III-Nitride Materials, Devices and Nano-Structures

Gray, C. Gabel, and C. Stroud, Jr. A 16 , As described earlier, the QD-QW model can account for their influences. Figure 14 shows the steady-state electron population distribution calculated for three different excitations. The black curve at pump power far below lasing threshold may be described by a single Fermi-Dirac function, indicating equilibrium condition within QD and QW populations, as well as between QD and QW populations.

At 7 mW pump power, which is within the transition from spontaneous emission to lasing, quasi equilibrium remains within QD and QW populations. However, the discontinuity in the blue curve indicates that the QD and QW populations are not in thermal equilibrium.


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Here, a dynamical population bottleneck exists where carriers in the QW are not efficiently channeled to the QD states. At the even higher power of 20mW, which is after the lasing threshold, a population hole exists in the QD population dip in red curve. Within the population hole are QDs contributing resonantly and non-resonantly to the laser field. Steady-state electron population per electronic state versus state energy, from the calculation giving the solid curve in Fig.

The pump powers are 4 mW, 7 mW, and 20 mW black, blue, and red curves, respectively. The energy is relative to the bulk InAs conduction band edge. Note that the maximum population is unity from the Exclusion Principle. Similar influence of off-resonant QDs is also reported in a single-photon source experiment. Figure 15 shows measured excitation dependences of intensity spectrum and g 2 0 for a device consisting one InAs QD that is resonant with a mode from a 1. This draws much attention when first observed because of the promise for higher single-photon source performance and more potential applications within quantum computing.

Reithmaier, G. Sek, A. Loffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. Keldysh, V. Kuakovskll, T. Reinecke, and A. Yoshie, A. Scherer, J. Hendrickson, G. Khitrova, H. Gibbs, G. Rupper, C. Ell, O. Shchekln, and D. Hennessy, A. Badolato, M. Winger, D. Gerace, M. Atature, S. Gulde, S. Falt, E. Hu, and A. Together the plots show the interesting transition from single-photon emission under strong-coupling condition to lasing in the weak coupling regime.

Reprinted Fig. A 96 , Gericke, P.


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  • PDF Optical and Electronic Process of Nano-Matters (Advances in Opto-Electronics).
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  • III-Nitride Materials, Devices and Nano-Structures!

Gartner, S. Holzinger, C. Hopfmann, T. Heindel, J. Schneider, M. Florian, F.

Undergraduate Courses

Eventually, g 2 0 reaches unity and the device lases. The resolution comes from modeling the experiment in detail. As shown in Fig. At high excitation the plot shows the onset of non-resonant QD contribution dotted trace.

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The addition of resonant and non-resonant contributions then allows the device to reach lasing threshold, as in the case of the inhomogeneously broadened laser discussed in Figs. There, system starts with thermal photon statistics at low excitation and with a relatively large number of QDs contributing to the emission.

Here, one starts in a photon-number Fock state and single QD instead. The transition from strong coupling SC to weak coupling WC is determined by the vanishing of the double peaks in the spectra in Fig. Plotted in b and c are the calculated pump rate dependences of average intracavity photon number and g 2 0.

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Advances in quantum light emission from 2D materials : Nanophotonics

The dashed and dotted curves in b are for contributions from resonant QD and from non-resonant QDs, respectively. The device is the same as in Fig. The correlation depends sensitively on the QD number. With a small number of QDs in the system, collisions are reduced to the extent necessary for the correlations to exist.

A consequence is the possibility of giant photon bunching as well as sub- and super-radiance. Leymann, A. Foerster, F. Jahnke, J. Wiersig, and C. Figure 17 a is a plot of g 2 0 versus pump power for a device similar to Device D in Table I , except for having 40 instead of 60 QDs in the active region. The points are from experiment and the curve is calculated using the QD-QW model with inter-QD correlation taken into account.

Figure 17 b shows the corresponding effect on the input-output curve. The difference in the curves indicates the inter-QD correlation contributions. There is a region, before lasing threshold where the solid curve falls below the dashed one.